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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D427
BLF2022-120 UHF push-pull power LDMOS transistor
Preliminary specification Supersedes data of 2001 Jan 04 2003 Mar 07
Philips Semiconductors
Preliminary specification
UHF push-pull power LDMOS transistor
FEATURES * Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 500 mA - Output power = 20 W (AV) - Gain = 12 dB - Efficiency = 15% - ACPR = -42 dBc at 3.84 MHz * Easy power control * Excellent ruggedness * High power gain * Excellent thermal stability * Designed for broadband operation (2000 to 2200 MHz) * Internally matched for ease of use. APPLICATIONS * RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 to 2200 MHz frequency range DESCRIPTION 120 W LDMOS push-pull power transistor for base station applications at frequencies from 2000 to 2200 MHz. QUICK REFERENCE DATA RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION 2-tone, class-AB f (MHz) f1 = 2170; f2 = 2170.1 VDS (V) 28 IDQ (mA) 500 PL (W) 120 (PEP) Gp (dB) >11
Top view 1 2
BLF2022-120
PINNING - SOT539A PIN 1 2 3 4 5 drain 1 drain 2 gate 1 gate 2 source, connected to flange DESCRIPTION
5 3 4
MBK880
Fig.1 Simplified outline.
D (%) >30
dim (dBc) -25
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS ID Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current (DC) storage temperature junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. - - - -65 - MIN. 65 15 18 +150 200 MAX. V V A C C UNIT
2003 Mar 07
2
Philips Semiconductors
Preliminary specification
UHF push-pull power LDMOS transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. Thermal resistance is determined under nominal 2-tone RF operating conditions. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL Per section V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon Crss Note 1. Capacitance of die only. drain-source breakdown voltage gate-source threshold voltage drain-source leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance VGS = 0; ID = 1.4 mA VDS = 10 V; ID = 140 mA VGS = 0; VDS = 26 V VGS = VGSth + 9 V; VDS = 10 V VGS = 15 V; VDS = 0 VDS = 10 V; ID = 5 A VGS = VGSth + 9 V; VDS = 5 V VGS = 0; VDS = 26 V; f = 1 MHz; note 1 65 4.4 - 18 - - - - - - - - - PARAMETER CONDITIONS MIN. PARAMETER thermal resistance from junction to mounting-base thermal resistance from mounting-base to heatsink CONDITIONS
BLF2022-120
VALUE 0.35 0.15
UNIT K/W K/W
PL = 120 W; Tmb = 50 C; note 1
TYP.
MAX. - 5.5 10 - 25 - - -
UNIT
V V A A nA S pF
4.2 0.15 3.4
APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 C; Rth mb-h = 0.65 K/W, unless otherwise specified. MODE OF OPERATION 2-tone, class-AB f (MHz) f1 = 2170; f2 = 2170.1 VDS (V) 28 IDQ (mA) 2 x 500 PL (W) 120 (PEP) Gp (dB) >11 D (%) >30 dim (dBc) -25
Ruggedness in class-AB operation The BLF2022-120 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; f = 2170 MHz, PL = 120 W (CW).
2003 Mar 07
3
Philips Semiconductors
Preliminary specification
UHF push-pull power LDMOS transistor
BLF2022-120
handbook, halfpage
15
MDB155
60 D (%)
handbook, halfpage
16
MDB156
0 ACPR (dBc)
Gp (dB)
Gp
Gp (dB) 12 Gp
-20
10
40 -40 ACPR
8
5 D
20 4
ACPR10 -60
0 30 35 40 45 50 PL (AV)(W)
0
0 20 30 40 PL (AV)(W)
-80 50
VDS = 2 V; IDQ = 2 x 500 mA; Th 25 C; f1 = 2170 MHz; f2 = 2170.1 MHz.
VDS = 2 V; IDQ = 2 x 500 mA; Th 25 C; f1 = 2140 MHz; f2 = 2140.1 MHz. Input signal: 3GPP W-CDMA 15DPCH; Peak to average ratio: 10.27 dB (0.0001%).
Fig.2
Power gain and drain efficiency as functions of average load power, typical values.
Fig.3
Power gain and adjacent channel power ratio as functions of load power; typical values.
handbook, halfpage
0
MDB157
dim (dBc) -20
-40
d3 d5
-60
d7 -80 30 35 40 45 50 PL (AV)(W)
VDS = 2 V; IDQ = 2 x 500 mA; Th 25 C; f1 = 2170 MHz; f2 = 2170.1 MHz.
Fig.4
Intermodulation distortion as a function of average load power; typical values.
2003 Mar 07
4
Philips Semiconductors
Preliminary specification
UHF push-pull power LDMOS transistor
PACKAGE OUTLINE Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads
BLF2022-120
SOT539A
D
A F D1
U1 q H1 C
B
w2 M C M
c
1
2
H U2
p
E1 w1 M A M B M
E
5
L A
3
b e
4
w3 M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A b c D D1 e E E1 9.53 9.27 F H H1 L p 3.30 3.05 Q 2.31 2.01 q 35.56 U1 U2 w1 w2 0.51 w3 0.25
9.50 5.33 11.81 0.15 31.55 31.52 13.72 9.30 3.96 11.56 0.08 30.94 30.96
1.75 17.12 25.53 3.73 1.50 16.10 25.27 2.72
41.28 10.29 0.25 41.02 10.03
0.210 0.465 0.006 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.147 0.130 0.091 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.156 0.455 0.003 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.107 0.120 0.079 1.615 0.395
OUTLINE VERSION SOT539A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-12-28 00-03-03
2003 Mar 07
5
Philips Semiconductors
Preliminary specification
UHF push-pull power LDMOS transistor
DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION
BLF2022-120
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
II
Preliminary data Qualification
III
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2003 Mar 07
6
Philips Semiconductors
Preliminary specification
UHF push-pull power LDMOS transistor
NOTES
BLF2022-120
2003 Mar 07
7
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/02/pp8
Date of release: 2003
Mar 07
Document order number:
9397 750 09188

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